(PDF) AP2612GY-HF Datasheet - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	AP2612GY-HF
Descripción	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	Advanced Power Electronics
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No Preview Available ! Advanced Power Electronics Corp. AP2612GY-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive ▼ Simple Drive Requirement ▼ Surface Mount Device ▼ RoHS Compliant S D D SOT-26 G D D BVDSS RDS(ON) ID Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The S0T-26 package is widely used for commercial-industrial surface mount applications. G 30V 35mΩ 6A D S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 30 +8 6 4.7 20 2 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 201103241 1 page

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PDF AP2612GY-HF Data sheet ( Hoja de datos )