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PDF BLF888A Data sheet ( Hoja de datos )

Número de pieza BLF888A
Descripción UHF Power LDMOS Transistor
Fabricantes NXP Semiconductors 
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BLF888A; BLF888AS
UHF power LDMOS transistor
Rev. 5 — 4 November 2013
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1. Application information
RF performance at VDS = 50 V unless otherwise specified.
Mode of operation
f
PL(AV)
(MHz)
(W)
PL(M)
(W)
Gp D
(dB) (%)
RF performance in a common source narrowband test circuit
CW 650 - 600 20 67
CW (42 V)
650
- 500 20 69
2-tone, class-AB
pulsed, class-AB [1]
f1 = 860; f2 = 860.1
860
250 -
21 46
- 600 20 58
DVB-T (8k OFDM)
858
110 -
21 31
858
125 -
21 32.5
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM)
858
110 -
20 30
858
120 -
20 31
IMD3
(dBc)
-
-
32
-
-
-
-
-
IMDshldr
(dBc)
-
-
-
-
32 [2]
30 [2]
32 [2]
31 [2]
PAR
(dB)
-
-
-
-
8.2 [3]
8.0 [3]
8.0 [3]
7.8 [3]
[1] Measured at = 10 %; tp = 100 s.
[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness (VSWR 40 : 1 through all phases)
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
Suitable for CW UHF and ISM applications
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

1 page




BLF888A pdf
NXP Semiconductors
BLF888A; BLF888AS
UHF power LDMOS transistor
6.1 Ruggedness in class-AB operation
The BLF888A and BLF888AS are capable of withstanding a load mismatch corresponding
to VSWR 40 : 1 through all phases under the following conditions: VDS = 50 V;
f = 860 MHz at rated power.
7. Application information
7.1 Narrowband RF figures
7.1.1 2-Tone
24
Gp
(dB)
20
Gp
ηD
16
001aan761 60
ηD
(%)
40
20
24
Gp
(dB)
20
16
Gp
IMD3
001aan762 0
IMD3
(dBc)
-20
-40
12
0
0
100 200 300 400 500
PL(AV) (W)
Fig 2.
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
2-Tone power gain and drain efficiency as
function of load power; typical values
12
0
-60
100 200 300 400 500
PL(AV) (W)
Fig 3.
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
2-Tone power gain and third order
intermodulation distortion as load power;
typical values
BLF888A_BLF888AS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 4 November 2013
© NXP B.V. 2013. All rights reserved.
5 of 17

5 Page





BLF888A arduino
NXP Semiconductors
BLF888A; BLF888AS
UHF power LDMOS transistor
L32
L30
50 mm
L33
L31
L31
L5
L1
L1
L2
L2
L30
L5
L32
105 mm
See Table 9 for a list of components.
Fig 11. Printed-Circuit Board (PCB) for class-AB common source amplifier
L3
L4
L3
001aam588
+VG1(test)
R5
C36
R7
50 Ω
R3
C34
C33
C35
C32
C30
C31
4 mm
R4
C37 R6
R8
+VG2(test)
R1
C17
C19
C1 C3
C5
49.6 mm
44 mm
+VD1(test)
+
C23
-
C21
C11
C7 C9
C10
C13
C2 C4 C6
C8
C12
C14
C15
50 Ω
C16
C20
R2
C18
6.3 mm
C22
-
C24
+
+VD2(test)
25.3 mm
26.3 mm
36.8 mm
001aan764
See Table 9 for a list of components.
Fig 12. Component layout for class-AB common source amplifier
BLF888A_BLF888AS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 4 November 2013
© NXP B.V. 2013. All rights reserved.
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