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PDF IRF5802PbF Data sheet ( Hoja de datos )
| Número de pieza | IRF5802PbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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SMPS MOSFET
Applications
l High frequency DC-DC converters
VDSS
150V
PD- 95475A
IRF5802PbF
HEXFET® Power MOSFET
RDS(on) max
1.2W@VGS = 10V
ID
0.9A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See D 1
App. Note AN1001)
l Fully Characterized Avalanche Voltage
D2
and Current
l Lead-Free
G3
6D
5D
4S
TSOP-6
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
0.9
0.7
7.0
2.0
0.02
± 30
7.1
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambient
Notes through are on page 8
www.irf.com
Max.
62.5
Units
°C/W
1
07/05/05
1 page  
IRF5802PbF
1.0
0.8
0.6
0.4
0.2
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF5802PbF.PDF ] | |
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