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PDF 2CL3512 Datasheet ( Hoja de datos )

Número de pieza 2CL3512
Descripción High Voltage Silicon Diodes
Fabricantes Tianjin zhonghuan semiconductor 
Logotipo Tianjin zhonghuan semiconductor Logotipo

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2CL3512 Hoja de datos, Descripción, Manual
High Voltage Silicon Diodes for Micro-wave oven
2CL3509 2CL3512
High voltage silicon diodes for
micro-wave oven
Features
z IFAV
350mA
z VRRM
9kV12kV
z High reliability
Primary characteristics
Type
2CL3509 2CL3512
IF(AV)
VRRM
IFSM
IRM
VFM
TJ max.
350mA
9kV 12kV
30A
5uA
9V 10V
130°C
Applications
Rectification for high voltage power supply of magnetron in
Micro wave oven and others
Mechanical data
z Case: Molded Plastic Body
z Epoxy meets UL 94V-0 flammability rating
z Terminals: Pure tin plated leads, solderable per J-STD-002
and JESD22-B102, E3 suffix for consumer grade, meet
JESD201 class 1A whisker test.
z Polarity: Color band denotes cathode end
Maximum rating (Ta=25oC unless otherwise noted)
Parameter
Symbol 2CL3509
2CL3512 Unit
Repetitive peak reverse voltage
Average forward current
60HZ half-sine wave, Resistance
load, Ta60°C
VRRM
IF(AV)
9 12
350
kV
mA
Forward surge current
Reverse surge current
Peak forward voltage
Peak reverse current
Avalanche breakdown
voltage
60HZ half-sine wave,
1cycle,Ta=25°C
WP=1ms, Rectangular-wave,
One-shot, Ta=25°C
IFM=350mA
VRM=VRRM
IR=100µA
IFSM
IRSM
VFM
IRRM1
VBR
30
100
9 10
5
9.5
12.5
A
mA
V
µA
kV
Virtual junction temperature
T(vj) 130 °C
Storage temperature
Tstg
-40 ~ +130
°C
Notes: Cooling Requirement: Cathode terminal is fastened to radiating fin that size is more than 50mm×50mm×0.6mm
Wind-cooled velocity is more than 0.5m/s
Rev. A1
Tianjin zhonghuan semiconductor co.,LTD
P1/3

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