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PDF B1431 Data sheet ( Hoja de datos )

Número de pieza B1431
Descripción PNP Silicon Epitaxial Transistor
Fabricantes NEC 
Logotipo NEC Logotipo



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No Preview Available ! B1431 Hoja de datos, Descripción, Manual

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The 2SB1431 is a Darlington power transistor that can directly
drive from the IC output. This transistor is ideal for motor drivers
and solenoid drivers in such as OA and FA equipment.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• High hFE due to Darlington connection:
hFE 2,000 (VCE = 2 V, IC = 3 A)
• Mold package that does not require an insulating board or
insulation bushing
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
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ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
Total power dissipation
IB(DC)
PT (Tc = 25°C)
Total power dissipation
PT (Ta = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW 10 ms, duty cycle 50%
Ratings
100
100
7.0
8.0
12
0.8
25
2.0
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
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