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Número de pieza | GT50MR21 | |
Descripción | Discrete IGBTs | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GT50MR21 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Discrete IGBTs Silicon N-Channel IGBT
GT50MR21
GT50MR21
1. Applications
• Dedicated to Voltage-Resonant Inverter Switching Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) 6.5th generation
(2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.
(3) Enhancement mode
(4) High-speed switching
IGBT : tf = 0.18 µs (typ.) (IC = 50 A)
FWD : trr = 0.45 µs (typ.) (IF = 15 A)
(5) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC = 50 A)
(6) High junction temperature : Tj = 175 (max)
3. Packaging and Internal Circuit
TO-3P(N)
1: Gate
2: Collector
3: Emitter
1 2011-06-10
Rev.1.0
1 page GT50MR21
Fig. 8.7 C - VCE
Fig. 8.8 Switching Time - IC
Fig. 8.9 Switching Time - RG
Fig. 8.10 rth(j-c) - tw
(Guaranteed Maximum)
Fig. 8.11 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.12 Reverse Bias SOA
(Guaranteed Maximum)
5 2011-06-10
Rev.1.0
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet GT50MR21.PDF ] |
Número de pieza | Descripción | Fabricantes |
GT50MR21 | Discrete IGBTs | Toshiba Semiconductor |
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