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PDF GT50N322A Data sheet ( Hoja de datos )
| Número de pieza | GT50N322A | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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GT50N322A
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50N322A
Voltage Resonance Inverter Switching Application
Fifth Generation IGBT
Unit: mm
• FRD included between emitter and collector
• Enhancement mode type
• High speed IGBT : tf = 0.10 μs (typ.) (IC = 60 A)
FRD : trr = 0.8 μs (typ.) (di/dt = −20 A/μs)
• Low saturation voltage: VCE (sat) = 2.2 V (typ.) (IC = 60 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
Diode forward current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature
DC
1ms
DC
1ms
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
1000
± 25
50
120
15
120
156
150
−55 to 150
V
V
A
A
W
°C
°C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Equivalent Circuit
Collector
Marking
Gate
Emitter
TOSHIBA
50N322A
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2008-01-11
1 page  
102 rth (j−c ) – tw
Tc = 25°C
101
Diode stage
100 IGBT stage
10−1
10−2
10−130−5 10−4 10−3 10−2
10−1
100
101
102
Pulse width tw (s)
50
40 trr
Irr, trr – di/dt
1
Common emitter
IF = 60 A
Tc = 25°C
0.8
30 0.6
20
Irr
10
0.4
0.2
00
0
−50
−100
−150
−200
−250
di/dt (A/μs)
GT50N322A
Irr, trr – IF
10 2
Common emitter
di/dt = −20 A/μs
Tc = 25°C
9 1.6
8
trr
7
Irr
6
1.2
0.8
0.4
50
0 20 40 60 80 100
Forward current IF (A)
5 2008-01-11
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT50N322A.PDF ] | |
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