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PDF K2929 Data sheet ( Hoja de datos )
| Número de pieza | K2929 | |
| Descripción | MOSFET ( Transistor ) - 2SK2929 | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K2929 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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2SK2929
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS =0.026 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
TO–220AB
ADE-208-552C (Z)
4th. Edition
Jun 1998
D
G
S
1
2
3
1. Gate
2. Drain(Flange
3. Source
1 page  
2SK2929
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
0.4 I D = 15 A
10 A
0.2
5A
0 4 8 12 16 20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05 VGS = 4 V
10 V
0.02
0.01
0.1 0.2 0.5 1 2 5 10 20
Drain Current I D (A)
50
Static Drain to Source on State Resistance
0.10
vs. Temperature
Pulse Test
0.08
10 A
0.06
V GS = 4 V
2, 5 A
0.04
2, 5, 10 A
0.02
0
–40
10 V
0 40 80 120
Case Temperature Tc (°C)
160
Forward Transfer Admittance vs.
Drain Current
50
Tc = –25 °C
20
10 25 °C
5 75 °C
2
1
0.5
0.1
V DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I D (A)
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet K2929.PDF ] | |
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