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PDF FDB016N04AL7 Data sheet ( Hoja de datos )
| Número de pieza | FDB016N04AL7 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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December 2010
FDB016N04AL7
N-Channel PowerTrench® MOSFET
40V, 306A, 1.6mW
Features
• RDS(on) = 1.16mW ( Typ.)@ VGS = 10V, ID = 80A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s adcanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Convertors / Synchronous Rectification
D(Pin4, tab)
D2-PAK-7L
FDB Series with suffix - L7
G
(Pin1)
S(Pin2,3,5,6,7)
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
FDB016N04AL7
VDSS
VGSS
ID
IDM
EAS
dv/dt
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
40
±20
306*
216*
160
1224
1350
6.0
PD Power Dissipation
(TC = 25oC)
- Derate above 25oC
283
1.89
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 160A.
Thermal Characteristics
Symbol
RqJC
RqJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.53
62.5
Units
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. A1
1
www.fairchildsemi.com
1 page  
Figure 12. Transient Thermal Response Curve
1
0.5
0.1 0.2
0.1
0.05
0.02
0.01
0.01 Single pulse
0.001
10-5
10-4
PDM
*Notes:
t1
t2
1. ZqJC(t) = 0.53oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZqJC(t)
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
1
10
FDB016N04AL7 Rev. A1
5
www.fairchildsemi.com
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDB016N04AL7.PDF ] | |
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