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PDF DMP21D5UFB4 Data sheet ( Hoja de datos )

Número de pieza DMP21D5UFB4
Descripción P-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes Incorporated 
Logotipo Diodes Incorporated Logotipo



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DMP21D5UFB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
RDS(on) max
1.0Ω @ VGS = -4.5V
1.5Ω @ VGS = -2.5V
2.0Ω @ VGS = -1.8V
3.0Ω @ VGS = -1.5V
ID
TA = 25°C
-700mA
-600mA
-500mA
-380mA
Features and Benefits
Low On-Resistance
Very Low Gate Threshold Voltage VGS(TH), 1.0V max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surfaced Mount Package
Ultra-low package profile, 0.4mm maximum package height
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
DC-DC Converters
Power management functions
Mechanical Data
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Drain
X2-DFN1006-3
ESD PROTECTED
Bottom View
S
D
G
Top View
Internal Schematic
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP21D5UFB4-7B
Case
X2-DFN1006-3
Packaging
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
NS = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
DMP21D5UFB4
Document number: DS35284 Rev. 5 - 2
1 of 6
www.diodes.com
May 2012
© Diodes Incorporated

1 page




DMP21D5UFB4 pdf
DMP21D5UFB4
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
0.001
0.000001 0.00001
0.0001
RθJA(t) = r(t) * RθJA
RθJA = 141°C/W
Duty Cycle, D = t1/t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 13 Transient Thermal Resistance
10
100
1,000
Package Outline Dimensions
A
A1
E b2
D
L2 L3 L1
b1
e
X2-DFN1006-3
Dim Min Max Typ
A 0.40
A1 0 0.05 0.02
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.05 1.00
E 0.55 0.65 0.60
e ⎯ ⎯ 0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3 ⎯ ⎯ 0.40
All Dimensions in mm
Suggested Pad Layout
X1
X G2
C
G1
Y
Z
DMP21D5UFB4
Document number: DS35284 Rev. 5 - 2
Dimensions
Z
G1
G2
X
X1
Y
C
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
5 of 6
www.diodes.com
May 2012
© Diodes Incorporated

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