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PDF FQPF8N60 Data sheet ( Hoja de datos )
| Número de pieza | FQPF8N60 | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | AOKE | |
| Logotipo |  |
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FQP8N60/FQPF8N60
600V N-Channel MOSFET
Features
■ 7.5A,600V,RDS(on)=1.0Ω@VGS=10V
■ Low gate charge
■ Low Crss (typical 23pF)
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability
■ ROHS product
General Description
This Power MOSFET is produced using AOKE’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power
factor correction, electronic lamp ballasts based on half bridge
topology.
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
IDM
VGS
EAS
EAR
dv/dt
PD
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
FQP8N60 FQPF8N60
600
7.5 7.5*
4.4 4.4*
(Note 1)
28
28*
±30
(Note 2)
420
(Note 1)
14.7
(Note 3)
5.5
147
1.18
48
0.38
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/ °C
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5
seconds.
-55 ~ 150
300
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ
Thermal Resistance, Junction-to-Ambient
FQP8N60
0.85
0.5
62.5
FQPF8N60 Units
2.6 °C/W
0.5 °C/W
62.5
°C/W
1/7
1 page  
FQP8N60/FQPF8N60
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FQPF8N60.PDF ] | |
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