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Número de pieza | IPP35CN10NG | |
Descripción | Power-Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPP35CN10NG (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! IPB35CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G IPU33CN10N G
OptiMOS®2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max (TO252)
ID
100 V
34 mΩ
27 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G
Package
Marking
PG-TO263-3
35CN10N
PG-TO252-3
33CN10N
PG-TO262-3
35CN10N
PG-TO220-3
35CN10N
PG-TO251-3
33CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=27 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=27 A, V DS=80 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
27
20
108
47
6
±20
58
-55 ... 175
55/175/56
A
mJ
kV/µs
V
W
°C
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Rev.1.02
page 1
2006-06-02
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
150
100
IPB35CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G IPU33CN10N G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
80
10 V
4.5 V
5V
5.5 V
8V
60
7V
50 6.5 V
6V
5.5 V
5V
0 4.5 V
0123
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
50
4
40
20
0
50
I D [A]
20
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
50
6V
8V
10 V
40 40
30 30
175 °C
20
20
25 °C
10 10
0
0
Rev.1.02
246
V GS [V]
0
80
page 5
10 20 30 40 50
I D [A]
2006-06-02
5 Page PG-TO252-3: Outline
IPB35CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G IPU33CN10N G
Rev.1.02
page 11
2006-06-02
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet IPP35CN10NG.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPP35CN10N | Power-Transistor | Infineon |
IPP35CN10NG | Power-Transistor | Infineon |
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