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PDF IPD320N20N3G Data sheet ( Hoja de datos )
| Número de pieza | IPD320N20N3G | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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IPD320N20N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Type
IPD320N20N3 G
200 V
32 mΩ
34 A
Package
Marking
PG-TO252-3
320N20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=34 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
Rev. 2.2
page 1
Value
34
24
136
190
±20
136
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
2009-10-22
1 page  
IPD320N20N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
60
10 V
7V
50
5V
40
30
20 4.5 V
10
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
60
50
4.5 V
40
30
20
5V
7V
10 V
10
0
0123
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
50
4
40
30
20
10
0
0
Rev. 2.2
175 °C
25 °C
246
V GS [V]
0
5 0 10 20 30 40 50 60 70
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80
70
60
50
40
30
20
10
0
80
page 5
25 50
I D [A]
75
2009-10-22
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD320N20N3G.PDF ] | |
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