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Número de pieza | IPD30N03S4L-09 | |
Descripción | Power-Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPD30N03S4L-09 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPD30N03S4L-09
Product Summary
V DS
R DS(on),max
ID
30 V
9.0 mΩ
30 A
PG-TO252-3-11
Type
IPD30N03S4L-09
Package
Marking
PG-TO252-3-11 4N03L09
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=30A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
30
30
120
28
30
±16
42
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
−
Rev. 1.0
page 1
2008-08-20
1 page IPD30N03S4L-09
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
120
10 V
100
80
5V
4.5 V
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
40
3V
35
3.5 V
4V
30
4.5 V
25
60 20
4V
15
40
3.5 V
10
5V
10 V
20
3V 5
0
012
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
120
-55 °C
100
0
34
0 20 40 60 80 100 120
I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 30 A; V GS = 10 V
25 °C
175 °C
13
12
11
80 10
9
60
8
40 7
20
0
0123456
V GS [V]
6
5
4
-60 -20 20 60 100 140 180
T j [°C]
Rev. 1.0
page 5
2008-08-20
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPD30N03S4L-09.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPD30N03S4L-09 | Power-Transistor | Infineon |
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