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Número de pieza | IPD30N03S2L-20 | |
Descripción | Power-Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPD30N03S2L-20 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! OptiMOS® Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPD30N03S2L-20
Product Summary
V DS
R DS(on),max
ID
30 V
20 mΩ
30 A
PG-TO252-3-11
Type
IPD30N03S2L-20
Package
Marking
PG-TO252-3-11 2N03L20
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=30A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
30
30
120
70
±20
60
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-07-18
1 page IPD30N03S2L-20
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
120
100
10 V
80
5V
60
4.5 V
40
4V
20
3.5 V
3V
0 2.5 V
0246
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
120
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: V GS
70
3V
60
3.5 V
50
4V
4.5 V
40
30
8 10
20 5 V
10 V
10
0
20
40 60 80
I D [A]
100 120
8 Typ. Forward transconductance
g fs = f(I D); T j = 25°C
parameter: g fs
60
100 50
80 40
60 30
40 20
20 25 °C
175 °C
-55 °C
0
012345
V GS [V]
10
0
0 20 40 60 80 100 120
I D [A]
Rev. 1.0
page 5
2006-07-18
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IPD30N03S2L-20.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPD30N03S2L-20 | Power-Transistor | Infineon |
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