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PDF IRFP150 Data sheet ( Hoja de datos )
| Número de pieza | IRFP150 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRFP150 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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NOTPROESCSOIBMLDMEaEStNaUDIRSBEFhSDPeT1FeIT5tOU0RTNENEPWRODDEUSCIGTNS
January 2002
IRFP150
40A, 100V, 0.055 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17431.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP150
TO-247
IRFP150
NOTE: When ordering, include the entire part number.
Features
• 40A, 100V
• rDS(ON) = 0.055Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
TOP VIEW
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
©2002 Fairchild Semiconductor Corporation
IRFP150 Rev. B
1 page  
IRFP150
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
5000
4000
3000
2000
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS
COSS
=
≈
CGD
CDS
+
CGD
CISS
COSS
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1000
CRSS
0
12
5 10 2
5 102
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
24 VDS = ≥ 20V
18
12
TJ = 25oC
TJ = 150oC
6
0
0 12 24 36 48 60
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
103
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
102
TJ = 150oC
10
TJ = 25oC
1
0 0.6 1.2 1.8 2.4 3.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 40A
16
12
8
4
VDS = 20V
VDS = 50V
VDS = 80V
0
0 30 60 90 120 150
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2002 Fairchild Semiconductor Corporation
IRFP150 Rev. B
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRFP150.PDF ] | |
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