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PDF BC813C Data sheet ( Hoja de datos )

Número de pieza BC813C
Descripción PNP Epitaxial Silicon Transistor
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo




1. BC813C






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No Preview Available ! BC813C Hoja de datos, Descripción, Manual

BC318C
PNP Epitaxial Silicon Transistor
• This device is designed for general purpose amplifier application at collector currents to 800mA.
• Sourced from process 38.
September 2007
1 TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
TJ, TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Value
30
20
5
100
-55 ~ 150
Units
V
V
V
mA
°C
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
BVCES
ICBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
IC = 10μA
IC = 1mA
IE = 100μA
IC = 100μA
VCB = 20V
T = 25 °C
T = 100 °C
hFE
VCE(sat)
VBE(on)
Ccb
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
VCE = 5V, IC = 10 μA
VCE = 5V, IC = 2 mA
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCE = 5V, IC = 2m
VCE = 5V, IC = 10mA
VCB = 10V, IE = 0, f = 1MHz
Min.
30
20
5
30
100
420
0.57
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3.These ratings are based on a maximum junction temperature of 150degrees C.
Typ.
Max.
30
15
800
0.2
0.5
0.72
0.77
4
Units
V
V
V
V
nA
μA
V
V
pF
© 2007 Fairchild Semiconductor Corporation
BC318C Rev. 1.0.0
1
www.fairchildsemi.com

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