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Número de pieza | 2N7002BKMB | |
Descripción | single N-channel Trench MOSFET | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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60 V, single N-channel Trench MOSFET
Rev. 2 — 13 June 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
Logic-level compatible
Ultra thin package profile with 0.37
mm height
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 450 mA; Tj = 25 °C
[1]
Min Typ Max Unit
- - 60 V
-20 -
20 V
- - 450 mA
- 1 1.6 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
1 page NXP Semiconductors
2N7002BKMB
60 V, single N-channel Trench MOSFET
103 017aaa109
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
0.02
0 0.01
10
10−3
10−2
FR4 PCB, standard footprint
10−1
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa110
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
0
0.02
0.01
10
10−3
10−2
10−1
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
2N7002BKMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 13 June 2012
© NXP B.V. 2012. All rights reserved.
5 of 15
5 Page NXP Semiconductors
10. Soldering
Footprint information for reflow soldering
2N7002BKMB
60 V, single N-channel Trench MOSFET
1.3
0.7 R0.05 (8x)
SOT883B
0.9
0.25
(2x)
0.3
(2x)
0.4
(2x)
0.3
0.4
solder land
solder paste deposit
occupied area
solder land plus solder paste
solder resist
Dimensions in mm
Fig 20. Reflow soldering footprint for SOT883B (DFN1006B-3)
0.6 0.7
sot883b_fr
2N7002BKMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 13 June 2012
© NXP B.V. 2012. All rights reserved.
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2N7002BKMB | single N-channel Trench MOSFET | NXP Semiconductors |
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