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PDF P3R1GE4JGF Data sheet ( Hoja de datos )

Número de pieza P3R1GE4JGF
Descripción 1G bits DDR2 SDRAM
Fabricantes Deutron Electronics 
Logotipo Deutron Electronics Logotipo



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DATA SHEET
1G bits DDR2 SDRAM
P3R1GE3JGF(128M words × 8 bits)
P3R1GE4JGF(64M words × 16 bits)
Specifications
Density: 1G bits
Organization
16M words × 8 bits × 8 banks (P3R1GE3JGF)
8M words × 16 bits × 8 banks (P3R1GE4JGF)
Package
60-ball FBGA (P3R1GE3JGF)
84-ball FBGA (P3R1GE4JGF)
Lead-free (RoHS compliant) and Halogen-free
Power supply: VDD, VDDQ = 1.8V ± 0.1V
Data rate
800Mbps (max.)
1KB page size (P3R1GE3JGF)
Row address: A0 to A13
Column address: A0 to A9
2KB page size (P3R1GE4JGF)
Row address: A0 to A12
Column address: A0 to A9
Eight internal banks for concurrent operation
Interface: SSTL_18
Burst lengths (BL): 4, 8
Burst type (BT):
Sequential (4, 8)
Interleave (4, 8)
/CAS Latency (CL): 3, 4, 5, 6
Precharge: auto precharge option for each burst
access
Driver strength: normal, weak
Refresh: auto-refresh, self-refresh
Refresh cycles: 8192 cycles/64ms
Average refresh period
7.8µs at 0°C TC ≤ +85°C
3.9µs at +85°C < TC ≤ +95°C
Operating case temperature range
TC = 0°C to +95°C
Features
Double-data-rate architecture; two data transfers per
clock cycle
The high-speed data transfer is realized by the 4 bits
prefetch pipelined architecture
Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK
transitions
Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
Data mask (DM) for write data
Posted /CAS by programmable additive latency for
better command and data bus efficiency
Programmable RDQS, /RDQS output for making × 8
organization compatible to × 4 organization
/DQS, (/RDQS) can be disabled for single-ended
Data Strobe operation
Off-Chip Driver (OCD) impedance adjustment is not
supported.
Datasheet V2.1 Deutron Electronics Corp.

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P3R1GE4JGF pdf
P3R1GE3JGF, P3R1GE4JGF
D
Electrical Specifications
All voltages are referenced to VSS (GND)
Execute power-up and Initialization sequence before proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit Notes
Power supply voltage
VDD
1.0 to +2.3
V1
Power supply voltage for output
VDDQ
0.5 to +2.3
V1
Input voltage
VIN 0.5 to +2.3
V1
Output voltage
VOUT
0.5 to +2.3
V1
Storage temperature
Tstg 55 to +100
°C 1, 2
Power dissipation
PD 1.0
W1
Short circuit output current
IOUT
50
mA 1
Notes: 1. Stresses greater than th ose listed under Absolute Maximum Ratings m ay cause permanent damage to
the device. This is a stress rating onl y and functional operation of the devic e at these or an y other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage temperature is the case surface temperature on the center/top side of the DRAM.
Caution
Exposing the device to stress ab ove those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Expo sure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Operating Temperature Condition
Parameter
Symbol
Rating
Unit Notes
Operating case temperature
TC
0 to +95
°C 1, 2
Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. Supporting 0°C to +85°C with full AC and DC specifications.
Supporting 0°C to + 85°C and being able to exte nd to + 95°C with doubling auto-refresh commands in
frequency to a 32ms period (tREFI = 3.9µs) and high er temperature self-refresh entry via A7 "1" o n
EMRS (2).
5

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P3R1GE4JGF arduino
Document : Ver.2.1 Deutron Electronics Corp.
P3R1GE3JGF, P3R1GE4JGF
DC Characteristics 2 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V)
Parameter
Symbol
Value
Unit Notes
Input leakage current
ILI
2
µA VDD VIN VSS
Output leakage current
ILO
5
µA VDDQ VOUT VSS
Minimum required output pull-up under AC
test load
VOH
Maximum required output pull-down under
AC test load
VOL
VTT + 0.603
VTT 0.603
V
V
Output timing measurement reference level VOTR
0.5 × VDDQ
V1
Output minimum sink DC current
IOL
+13.4
mA 3, 4
Output minimum source DC current
IOH
13.4
mA 2, 4
Notes: 1. The VDDQ of the device under test is referenced.
2. VDDQ = 1.7V; VOUT = 1.42V.
3. VDDQ = 1.7V; VOUT = 0.28V.
4. The DC value of VREF applied to the receiving device is expected to be set to VTT.
DC Characteristics 3 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V)
Parameter
Symbol
min.
max.
Unit Notes
AC differential input voltage
VID (AC)
0.5
VDDQ + 0.6
V 1, 2
AC differential cross point voltage
VIX (AC)
0.5 × VDDQ 0.175 0.5 × VDDQ + 0.175 V
2
AC differential cross point voltage
VOX (AC)
0.5 × VDDQ 0.125 0.5 × VDDQ + 0.125 V
3
Notes: 1. VID (AC) specifies the input differential voltage |VTR -VCP| required for switching, where VTR is the tru e
input signal (such as CK, D QS, RDQS) and VCP is t he complementary input signal (such as /CK, /DQS,
/RDQS). The minimum value is equal to VIH (AC) VIL (AC).
2. The typical value of VIX (AC) is expected to be about 0.5 × VDDQ of the transmitting device and VIX (AC)
is expected to track variations in VDDQ. VIX (AC) i ndicates the voltage at which differential input signals
must cross.
3. The typical value of VO X (AC) is e xpected to be a bout 0.5 × VDDQ of the transmit ting device and
VOX (AC) is expected to track variations in VDDQ. VOX (AC) indicates the vo ltage at which differential
output signals must cross.
VTR
VCP
VDDQ
VID Crossing point
VIX or VOX
VSSQ
Differential Signal Levels*1, 2
Document : Ver.2.1 Deutron Electronics Corp.
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