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PDF IPL60R199CP Data sheet ( Hoja de datos )
| Número de pieza | IPL60R199CP | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
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MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS CP
600V CoolMOS™ CP Power Transistor
IPL60R199CP
Data Sheet
Rev. 2.3, 2015-10-23
Final
Industrial & Multimarket
1 page  
600V CoolMOS™ CP Power Transistor
IPL60R199CP
Electrical characteristics
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 4 Static characteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V(BR)DSS
VGS(th)
IDSS
Min.
600
2.5
-
-
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
-
-
-
Gate resistance
RG -
Values
Typ.
Max.
--
3 3.5
-1
10 -
- 100
0.18 0.199
0.47 -
2-
Unit Note / Test Condition
V VGS=0 V, ID=0.25 mA
VDS=VGS, ID=0.66 mA
µA VDS=600 V, VGS=0 V,
Tj=25 °C
VDS=600 V, VGS=0 V,
Tj=150 °C
nA VGS=20 V, VDS=0 V
# VGS=10 V, ID=9.9 A,
Tj=25 °C
VGS=10 V, ID=9.9 A,
Tj=150 °C
# f=1 MHz, open drain
Table 5 Dynamic characteristics
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Input capacitance
Output capacitance
Ciss
Coss
-
-
1520
72
-
-
pF VGS=0 V, VDS=100 V,
f=1 MHz
Effective output capacitance,
energy related1)
Co(er)
-
69 -
VGS=0 V,
VDS=0...480 V
Effective output capacitance, time Co(tr)
related2)
-
180 -
ID=constant, VGS=0 V
VDS=0...480V
Turn-on delay time
Rise time
Turn-off delay time
td(on)
tr
td(off)
-
-
-
10 -
5-
50 -
ns VDD=400 V,
VGS=13 V, ID=9.9 A,
RG= 3.3#
"see table 16)
Fall time
tf - 5 -
1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
Final Data Sheet
5 Rev. 2.3, 2015-10-23
5 Page 
600V CoolMOS™ CP Power Transistor
IPL60R199CP
Test circuits
6 Test circuits
Table 16 Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load Switching time waveform
VGS
VDS
VDS
90%
VGS
10%
td(on) tr
ton
td(off) tf
toff
Table 17 Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit
Unclamped inductive waveform
ID VDS
V(BR)DS
VD
VDS
ID
VDS
Table 18 Test circuit and waveform for diode characteristics
Test circuit for diode characteristics
Diode recovery waveform
RG1
ID
RG2
VDS
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998
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RG1 = RG2
;57***//
Final Data Sheet
11 Rev. 2.3, 2015-10-23
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet IPL60R199CP.PDF ] | |
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