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PDF IRG7PK35UD1PbF Data sheet ( Hoja de datos )
| Número de pieza | IRG7PK35UD1PbF | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | International Rectifier | |
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IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
VCES = 1400V
IC = 20A, TC =100°C
TJ(max) = 150°C
VCE(ON) typ. = 2.0V @ IC = 20A
Applications
Induction heating
Microwave ovens
Soft switching applications
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
C
C
G
E
n-channel
GCE
E
GC
IRG7PK35UD1PbF
TO‐247AC
IRG7PK35UD1‐EPbF
TO‐247AD
G
Gate
C
Collector
E
Emitter
Features
Low VCE(ON), ultra-low VF, and turn-off soft switching losses
Positive VCE (ON) temperature coefficient and tight distribution
of parameters
Lead-free, RoHS compliant
Benefits
High efficiency in a wide range of soft switching
applications and switching frequencies
Excellent current sharing in parallel operation
Environmentally friendly
Base part number
IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1400
40
20
200
80
40
20
±30
167
67
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case (IGBT)
Thermal Resistance Junction-to-Case (Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.75
1.4
–––
–––
Units
V
A
V
W
C
Units
°C/W
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
February 27, 2014
1 page  
2.5
IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
1000
2.0
EOFF
1.5
1.0
tdOFF
100 tF
0.5
0.0
0
10 20 30
IC (A)
40
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; VCE = 600V, RG = 10; VGE = 15V
2.6
10
0
10 20 30
IC (A)
40
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; VCE = 600V, RG = 10; VGE = 15V
10000
2.2
EOFF
1.8
1.4
1000
100
tdOFF
tF
1.0
0
20 40 60 80 100
Rg ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; VCE = 600V, ICE = 20A; VGE = 15V
10000
Cies
1000
100
Coes
10 Cres
1
0 100 200 300 400 500 600
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
5 www.irf.com © 2014 International Rectifier
10
0
20 40 60 80 100
RG ()
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; VCE = 600V, ICE = 20A; VGE = 15V
16
14 VCES = 600V
12 VCES = 400V
10
8
6
4
2
0
0 10 20 30 40 50 60 70
Q G, Total Gate Charge (nC)
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 20A
Submit Datasheet Feedback
February 27, 2014
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| PDF Descargar | [ Datasheet IRG7PK35UD1PbF.PDF ] | |
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