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PDF IRFH4210PbF Data sheet ( Hoja de datos )
| Número de pieza | IRFH4210PbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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FastIRFET™
IRFH4210PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
1.10
1.35
245
V
m
nC
A
PQFN 5X6 mm
Applications
Synchronous Rectifier MOSFET for Synchronous Buck Converters
Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters
Active ORing and Hot Swap
Battery Operated DC Motor Inverters
Features
Low RDSon (<1.10m)
Low Thermal Resistance to PCB (<1.2°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
IRFH4210PbF
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4210TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
45
245
155
400
3.6
104
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 8
1 www.irf.com © 2013 International Rectifier
August 07, 2013
1 page  
5.0
4.0
ID = 50A
3.0
2.0 TJ = 125°C
1.0
TJ = 25°C
0.0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On– Resistance vs. Gate Voltage
1000
100
IRFH4210PbF
900
800
TOP
ID
13A
700 25A
BOTTOM 50A
600
500
400
300
200
100
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14. Typical Avalanche Current vs. Pulsewidth
1.0E-01
5 www.irf.com © 2013 International Rectifier
August 07, 2013
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