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Número de pieza | SCG2019 | |
Descripción | P-Channel Enhancement Mode MOSFET | |
Fabricantes | SeCoS Halbleitertechnologie | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SCG2019 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Elektronische Bauelemente
SCG2019
-0.62A , -20V , RDS(ON) 810 mΩ
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation.
MECHANICAL DATA
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
APPLICATION
DC-DC converter circuit
Load Switch
MARKING
P9 = Date Code
SOT-523
A
M
3
Top View
CB
12
KL
E
3
1
2
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.5 1.7
1.45 1.75
0.7 0.9
0.7 0.9
0.9 1.1
0.15 0.35
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
- 0.1
0.55 REF.
0.1 0.2
-
0.5 TYP.
0.25 0.325
Top View
PACKAGE INFORMATION
Package
MPQ
SOT-523
3K
Leader Size
7 inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current 1
TA= 25°C
TA= 70°C
Power Dissipation 1
TA= 25°C
TA= 70°C
Continuous Drain Current 2
TA= 25°C
TA= 70°C
Power Dissipation 2
Pulsed Drain Current 3
TA= 25°C
TA= 70°C
Lead Temperature
Operating Junction & Storage Temperature Range
VDS
VGS
ID
PD
ID
PD
IDM
TL
TJ, TSTG
Rating
10S Steady State
-20
±5
-0.73
-0.62
-0.58
-0.5
0.38 0.28
0.24 0.18
-0.61
-0.55
-0.49
-0.44
0.27 0.22
0.17 0.14
-1.2
260
150, -55~150
Unit
V
V
A
W
A
W
A
°C
°C
http://www.SeCoSGmbH.com/
12-Mar-2013 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet SCG2019.PDF ] |
Número de pieza | Descripción | Fabricantes |
SCG2019 | P-Channel Enhancement Mode MOSFET | SeCoS Halbleitertechnologie |
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