DataSheet.es    


PDF SEMiX101GD12E4s Data sheet ( Hoja de datos )

Número de pieza SEMiX101GD12E4s
Descripción IGBT Modules
Fabricantes Semikron International 
Logotipo Semikron International Logotipo



Hay una vista previa y un enlace de descarga de SEMiX101GD12E4s (archivo pdf) en la parte inferior de esta página.


Total 5 Páginas

No Preview Available ! SEMiX101GD12E4s Hoja de datos, Descripción, Manual

SEMiX101GD12E4s
SEMiX®13
Trench IGBT Modules
SEMiX101GD12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 3xICnom
VCC = 800 V
VGE 20 V
VCES 1200 V
Tc = 25 °C
Tc = 80 °C
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 100 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 3.8 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 100 A
Tj = 150 °C
Tj = 150 °C
RG on = 1
RG off = 1
Tj = 150 °C
Tj = 150 °C
di/dton = 3100 A/µs Tj = 150 °C
di/dtoff = 1200 A/µs Tj = 150 °C
per IGBT
Values
1200
160
123
100
300
-20 ... 20
10
-40 ... 175
121
91
100
300
550
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min. typ. max. Unit
1.8 2.05 V
2.2 2.4 V
0.8 0.9 V
0.7 0.8 V
10.0 11.5 m
15.0 16.0 m
5 5.8 6.5 V
0.1 0.3 mA
mA
6.2 nF
0.41 nF
0.34 nF
565 nC
7.50
187 ns
35 ns
10.8 mJ
467 ns
94 ns
13.3 mJ
0.27 K/W
GD
© by SEMIKRON
Rev. 1 – 20.02.2009
1

1 page




SEMiX101GD12E4s pdf
SEMiX101GD12E4s
SEMiX 13
GD
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 1 – 20.02.2009
5

5 Page










PáginasTotal 5 Páginas
PDF Descargar[ Datasheet SEMiX101GD12E4s.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
SEMiX101GD12E4sIGBT ModulesSemikron International
Semikron International

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar