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PDF IRF9393PbF Data sheet ( Hoja de datos )
| Número de pieza | IRF9393PbF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
VGS max
RDS(on) max
(@VGS = -10V)
ID
(@TA = 25°C)
-30
±25
19.4
-9.2
V
V
mΩ
A
S1
S2
S3
G4
PD - 97522A
IRF9393PbF
HEXFET® Power MOSFET
8D
7D
6D
5D
SO-8
Applications
• Adaptor Input Switch for Notebook PC
Features and Benefits
Features
25V VGS max
Industry-Standard SO8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Direct Drive at High VGS
Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number
IRF9393PbF
IRF9393TRPbF
Package Type
SO8
SO8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
-30
± 25
-9.2
-7.3
-75
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 2
www.irf.com
1
11/3/10
1 page  
60
ID = -9.4A
50
40
30
TJ = 125°C
20
TJ = 25°C
10
2 4 6 8 10 12 14 16 18 20
-VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
420
ID
360 TOP -2.1A
-3.0A
300 BOTTOM -7.5A
240
180
120
60
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
IRF9393PbF
80
70
60
50 VGS = -4.5V
40
30
20 VGS = -10V
10
0
10 20 30 40 50 60 70
-ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
1000
800
600
400
200
0
1E-5
1E-4
1E-3
1E-2
Time (sec)
1E-1
Fig 16. Typical Power vs. Time
1E+0
D.U.T * +
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
+ Current Transformer
-
- +
RG
• di/dt controlled by RG
• Driver same type as D.U.T.
VDD
+
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
*VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
IInnductorr CCuurrernetnt
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
VDD
ISD
Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
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5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF9393PbF.PDF ] | |
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