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PDF IRF3610SPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF3610SPBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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IRF3610SPbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
S ID
100V
9.3mΩ
11.6mΩ
103A
D
S
G
D2Pak
IRF3610SPbF
G
Gate
D
D ra in
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Characteristics
dEAS Single Pulse Avalanche Energy (Thermally Limited)
ÃIAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
jkJunction-to-Case
iJunction-to-Ambient (PCB Mount)
Max.
103
73
410
333
2.2
± 20
23
-55 to + 175
300 (1.6mm from case)
460
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
Max.
0.50
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
March 26, 2014
1 page  
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
IRF3610SPbF
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance Junction-to-Case
1000
Allowed avalanche Current vs avalanche
100
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
1 pulsewidth, tav, assuming ∆Τj = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulse Width
1.0E-02
1.0E-01
500
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
400 ID = 62A
300
200
100
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
March 26, 2014
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF3610SPBF.PDF ] | |
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