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PDF FDD18N20LZ Data sheet ( Hoja de datos )

Número de pieza FDD18N20LZ
Descripción N-Channel UniFETTM MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FDD18N20LZ
N-Channel UniFETTM MOSFET
200 V, 16 A, 125 mΩ
Features
• R DS(on) = 125 mΩ (Typ.) @ VGS = 10 V, ID = 8 A
• Low Gate Charge (Typ. 30 nC)
Low CRSS (Typ. 25 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LED TV
Consumer Appliances
• Uninterruptible Power Supply
December 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
S
D
D-PAK
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2011 Fairchild Semiconductor Corporation
FDD18N20LZ Rev. C1
1
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDD18N20LZ
200
±20
16
9.6
64
320
16
8.9
10
89
0.7
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDD18N20LZ
1.4
83
Unit
oC/W
www.fairchildsemi.com

1 page




FDD18N20LZ pdf
IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
tt onon
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VGS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDD18N20LZ Rev. C1
5
www.fairchildsemi.com

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