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PDF CZD13003 Data sheet ( Hoja de datos )
| Número de pieza | CZD13003 | |
| Descripción | NPN Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS Halbleitertechnologie | |
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Elektronische Bauelemente
CZD13003
1.5A , 700V
NPN Plastic Encapsulated Transistor
FEATURES
Power Switching Applications
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-252
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
A
B
GE
C
D
1
Base
Collector
2
3
Emitter
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.80 J 2.30 REF.
B 4.95 5.50 K 0.64 1.14
C 2.15 2.40 M 0.50 0.95
D 0.43 0.9 N 1.3 1.8
E 6.4 7.5 O 0 0.15
F 2.40 3.0 P 0.58REF.
G 5.40 6.25
H 0.60 1.20
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
700
400
9
1.5
1.25
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
700
-
-
V IC=1mA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
400
-
-
V IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
9
-
-
V IE=1mA, IC=0
Collector Cut – Off Current
ICBO - - 1 mA VCB=700V, IE=0
Collector Cut – Off Current
ICEO - - 0.5 mA VCE=400V, IB=0
Emitter Cut – Off Current
IEBO - - 1 mA VEB=9V, IC=0
DC Current Gain
hFE (1) 20 - 30
hFE (2)
5
-
-
VCE=5V, IC=0.5A
VCE=5V, IC=1.5A
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
1 V IC=1A, IB=250mA
Base to Emitter Saturation Voltage
VBE(sat)
-
- 1.2 V IC=1A, IB=250mA
Base-emitter voltage
VBE - - 3 V IB=2A
Transition Frequency
fT 5 - - MHz VCE=10V, IC=100mA, f =1MHz
Fall time
Storage time
tf
tS
- - 0.5 µs
- - 2.5 µs IC=1A, IB1= -IB2=0.2A,VCC=100V
http://www.SeCoSGmbH.com/
18-Jan-2013 Rev. A
Any changes of specification will not be informed individually.
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