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PDF VS-MBR350-M3 Data sheet ( Hoja de datos )

Número de pieza VS-MBR350-M3
Descripción Schottky Rectifier ( Diode )
Fabricantes Vishay 
Logotipo Vishay Logotipo



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No Preview Available ! VS-MBR350-M3 Hoja de datos, Descripción, Manual

VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 3 A
C-16
Cathode
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
DO-201AD (C-16)
3A
50 V, 60 V
0.64 V
15 mA at 125 °C
150 °C
Single die
5.0 mJ
FEATURES
• Low profile, axial leaded outline
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-MBR350..., VS-MBR350 axial leaded Schottky
rectifier has been optimized for very low forward voltage
drop, with moderate leakage. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF 3 Apk, TJ = 25 °C
TJ
VALUES
3.0
50/60
460
0.73
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak
reverse voltage
SYMBOL
VR
VRWM
VS-MBR350
50
VS-MBR350-M3
50
VS-MBR360
60
VS-MBR360-M3 UNITS
60 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 4
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 6
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TL = 50 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1 A, L = 10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by, TJ maximum VA = 1.5 x VR typical
VALUES
3.0
460
80
5.0
1.0
UNITS
A
mJ
A
Revision: 13-Oct-11
1 Document Number: 93450
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




VS-MBR350-M3 pdf
www.vishay.com
Outline Dimensions
Vishay Semiconductors
Axial DO-201AD (C-16)
DIMENSIONS in millimeters (inches)
Ø 5.8 (0.23)
MAX.
Cathode band
21.0 (0.83) MIN.
(2 places)
21.0 (0.83) MIN.
(2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
10.0 (0.39)
MAX.
10.0 (0.39)
MAX.
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
2.54 (0.100) MAX.
Flash (2 places)
Ø 5.8 (0.23)
MAX.
Revision: 29-Aug-11
1 Document Number: 95242
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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