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PDF SMK830P Data sheet ( Hoja de datos )
| Número de pieza | SMK830P | |
| Descripción | Advanced N-Ch Power MOSFET | |
| Fabricantes | KODENSHI KOREA | |
| Logotipo |  |
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SMK830P
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
High Voltage : BVDSS=500V(Min.)
Low Crss : Crss=33pF(Typ.)
Low gate charge : Qg=16nC(Typ.)
Low RDS(on) : RDS(on)=1.5Ω(Max.)
Ordering Information
Type No.
Marking
Package Code
SMK830P
SMK830
TO-220AB
PIN Connection
GDS
G
TO-220AB
Marking Diagram
AUK
GYMDD
SMK830
Column 1 : Manufacturer
Column 2 : Production Information
e.g.) GYMDD
-. G : Factory Management Code
-. YMDD : Date Code (Year, Month, Date)
Column 3 : Device Code
D
S
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current (DC) *
Drain current (Pulsed) *
ID
TC=25C
TC=100C
IDM
Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
②
②
①
①
PD
IAS
EAS
IAR
EAR
Junction temperature
TJ
Storage temperature range
* Limited by maximum junction temperature
Tstg
Rating
500
30
4.5
2.9
18
70
4.5
250
4.5
5.0
150
-55~150
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-A)
Typ.
-
-
Max.
1.78
62.5
Unit
V
V
A
A
A
W
A
mJ
A
mJ
C
Unit
C/W
KSD-T0P025-002
1
1 page  
Fig. 11 Gate Charge Test Circuit & Waveform
SMK830P
Fig. 12 Switching Time Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T0P025-002
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SMK830P.PDF ] | |
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