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PDF SMK830D Data sheet ( Hoja de datos )
| Número de pieza | SMK830D | |
| Descripción | Advanced N-Ch Power MOSFET | |
| Fabricantes | KODENSHI KOREA | |
| Logotipo |  |
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SMK830D
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
• High Voltage : BVDSS=500V(Min.)
• Low Crss : Crss=33pF(Typ.)
• Low gate charge : Qg=16nC(Typ.)
• Low RDS(on) : RDS(on)=1.5Ω(Max.)
Ordering Information
Type No.
Marking
Package Code
SMK830D
SMK830
TO-252
PIN Connection
GS
D
G
TO-252
D
S
Marking Diagram
SMK
830
YWW
Column 1,2 : Device Code
Column 3 : Production Information
e.g.) YWW
-. YWW : Date Code (year, week)
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
VDSS
Gate-source voltage
Drain current (DC) *
VGSS
(Tc=25℃)
ID (Tc=100℃)
Drain current (Pulsed) *
IDM
Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
②
②
①
①
PD
IAS
EAS
IAR
EAR
Junction temperature
TJ
Storage temperature range
Tstg
* Limited by maximum junction temperature
Rating
500
±30
4.5
2.9
18
48
4.5
250
4.5
5.0
150
-55~150
Characteristic
Symbol
Thermal
resistance
Junction-case
Junction-ambient **
Rth(J-C)
Rth(J-A)
** When mounted on the minimum pad size recommended (PCB Mount)
Typ.
-
-
Max.
2.6
50
KSD-T6O010-001
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
Unit
°C/W
1
1 page  
Fig. 11 Gate Charge Test Circuit & Waveform
SMK830D
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T6O010-001
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SMK830D.PDF ] | |
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