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Número de pieza | SMK1820D | |
Descripción | Advanced N-Ch Power MOSFET | |
Fabricantes | KODENSHI KOREA | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SMK1820D (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! SMK1820D
Advanced N-Ch Power MOSFET
DC-DC
CONVERTER APPLICATION
HIGH VOLTAGE SWITCHING APPLICATIONS
Features
High Voltage: BVDSS=200V(Min.)
Low Crss : Crss=55pF(Typ.)
Low gate charge : Qg=22nC(Typ.)
Low RDS(on) :RDS(on)=0.17Ω(Max.)
Ordering Information
Type No.
Marking
Package Code
SMK1820D
SMK1820
TO-252
PIN Connection
D
G
S
G
TO-252
D
S
Marking Diagram
Column 1 2 : Device Code
Column 3: Production Information
e.g.) YWW
-. Y: Year Code
-. WW: Week Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Drain power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
②
②
①
①
VDSS
VGSS
(TC=25℃)
ID (TC=100℃)
IDM
PD
IAS
EAS
IAR
EAR
TJ
Tstg
* Limited by maximum junction temperature
Characteristic
Symbol
Thermal
resistance **
Junction-case
Junction-ambient
Rth(J-C)
Rth(J-A)
** When mounted on the minimum pad size recommended (PCB Mount)
KSD-T6O013-001
Rating
200
30
18
11.3
72
70
18
453
18
13.9
150
-55~150
Typ.
-
-
Max
1.79
50
Unit
V
V
A
A
A
W
A
mJ
A
mJ
C
Unit
℃/W
1
1 page Fig. 11 Gate Charge Test Circuit & Waveform
SMK1820D
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T6O013-001
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SMK1820D.PDF ] |
Número de pieza | Descripción | Fabricantes |
SMK1820D | Advanced N-Ch Power MOSFET | KODENSHI KOREA |
SMK1820D2 | Advanced N-Ch Power MOSFET | KODENSHI KOREA |
SMK1820F | Advanced N-Ch Power MOSFET | KODENSHI KOREA |
SMK1820FJ | Advanced N-Ch Power MOSFET | KODENSHI KOREA |
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