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PDF SMK1625D2 Data sheet ( Hoja de datos )
| Número de pieza | SMK1625D2 | |
| Descripción | Advanced N-Ch Power MOSFET | |
| Fabricantes | KODENSHI KOREA | |
| Logotipo |  |
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SMK1625D2
Advanced N-Ch Power MOSFET
DC-DC CONVERTER APPLICATION
HIGH VOLTAGE SWITCHING APPLICATIONS
Features
High Voltage : BVDSS=250V (Min.)
Low Crss : Crss=49pF (Typ.)
Low gate charge : Qg=22nC (Typ.)
Low RDS(on) : RDS(on)=0.27Ω (Max.)
Ordering Information
Type No.
Marking
Package Code
SMK1625D2
SMK1625
D2-PAK
PIN Connection
D
GS
G
D2-PAK
D
S
Marking Diagram
AUK
GYMDD
SMK1625
Column 1 : Manufacturer
Column 2 : Production Information
e.g.) GYMDD
-. G : Factory management code
-. YMDD : Date Code (year, month, date)
Column 3 : Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Drain power dissipation *
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
VDSS
VGSS
ID
(TC=25C)
(TC=100C)
IDM
PD
IAS
EAS
IAR
EAR
TJ
Tstg
Rating
250
30
16
7.2
64
130
16
480
16
13.9
150
-55~150
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-A)
Typ.
-
-
Max.
0.96
62.5
Unit
V
V
A
A
A
W
A
mJ
A
mJ
C
Unit
C/W
KSD-T6S006-000
1
1 page  
Fig. 11 Gate Charge Test Circuit & Waveform
SMK1625D2
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T6S006-000
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SMK1625D2.PDF ] | |
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