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PDF SMK0465FJ Data sheet ( Hoja de datos )
| Número de pieza | SMK0465FJ | |
| Descripción | Advanced N-Ch Power MOSFET | |
| Fabricantes | KODENSHI KOREA | |
| Logotipo |  |
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SMK0465FJ
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
High Voltage : BVDSS=650V(Min.)
Low Crss : Crss=5.6pF(Typ.)
Low gate charge : Qg=11.2nC(Typ.)
Low RDS(on) : RDS(on)=3.0Ω(Max.)
Ordering Information
Type No.
Marking
Package Code
SMK0465FJ
SMK0465
TO-220F-3L
(J Forming)
PIN Connection
G
DS
G
TO-220F-3L
D
S
Marking Diagram
AAUUKK
SMGΔKYYM0M4D6DD5D
SDB20D45
Column 1 : Manufacturer
Column 2 : Production Information
e.g.) GYMDD
-. G : Factory management code
-. YMDD : Date Code (year, month, date)
Column 3 : Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current (DC) *
Tc=25C
ID Tc=100C
Drain current (Pulsed) *
IDM
Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
②
②
①
①
PD
IAS
EAS
IAR
EAR
Junction temperature
TJ
Storage temperature range
* Limited by maximum junction temperature
Tstg
Rating
650
30
4
2.0
16
30
4
81.5
4
3.4
150
-55~150
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-A)
Typ.
-
-
Max.
4.16
62.5
Unit
V
V
A
A
A
W
A
mJ
A
mJ
C
Unit
C/W
KSD-T0O065-000
1
1 page  
Fig. 11 Gate Charge Test Circuit & Waveform
SMK0465FJ
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T0O065-000
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SMK0465FJ.PDF ] | |
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