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PDF SMK0170I Data sheet ( Hoja de datos )
| Número de pieza | SMK0170I | |
| Descripción | Advanced N-Ch Power MOSFET | |
| Fabricantes | KODENSHI KOREA | |
| Logotipo |  |
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SMK0170I
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
High Voltage : BVDSS=700V(Min.)
Low Crss : Crss=2.6pF(Typ.)
Low gate charge : Qg=4.1nC(Typ.)
Low RDS(ON) : RDS(ON)=15Ω(Max.)
Ordering Information
Type No.
Marking
Package Code
SMK0170I
SMK0170
I-PAK
PIN Connection
GDS
G
I-PAK
Marking Diagram
SMK0170
YWW
Column 1 : Device Code
Column 2 : Production Information
e.g.) YWW
-. Y : Year Code
-. WW : Week Code
D
S
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current (DC) *
ID
(TC=25℃)
(TC=100℃)
Drain current (Pulsed) *
IDP
Total Power dissipation
PD
Avalanche current (Single)
②
IAS
Single pulsed avalanche energy ②
EAS
Avalanche current (Repetitive)
①
IAR
Repetitive avalanche energy
①
EAR
Junction temperature
TJ
Storage temperature range
Tstg
* Limited by maximum junction temperature
Rating
700
30
1.0
0.63
4.0
28
1.0
17
1.0
0.5
150
-55~150
Characteristic
Thermal
resistance*
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-A)
Typ.
-
-
Max.
4.46
62.5
Unit
V
V
A
A
W
A
mJ
A
mJ
C
Unit
℃/W
KSD-T6Q007-000
1
1 page  
Fig. 11 Gate Charge Test Circuit & Waveform
SMK0170I
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T6Q007-000
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SMK0170I.PDF ] | |
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