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Número de pieza | MDD3752RH | |
Descripción | P-Channel Trench MOSFET | |
Fabricantes | MagnaChip | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MDD3752RH (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MDD3752
P-Channel Trench MOSFET, -40V, -43A, 17mΩ
General Description
The MDD3752 uses advanced MagnaChip’s Trench
MOSFET Technology to provided high performance in on-
state resistance, switching performance and reliability.
Low RDS(ON), Low Gate Charge can be offering superior
benefit in the application.
Features
VDS = -40V
ID = -43A @VGS = -10V
RDS(ON)
< 17mΩ @ VGS = -10V
< 25mΩ @ VGS = -4.5V
Applications
Inverters
General purpose applications
D
G
Absolute Maximum Ratings (TC =25o)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
(Note 2)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
TC=25oC
TC=100oC
TC=25oC
TC=100oC
(Note 3)
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
RθJA
RθJC
S
Rating
-40
±20
43
27
-90
50
20
128
-55~+150
Unit
V
V
A
A
A
W
mJ
oC
Rating
40
2.5
Unit
oC/W
November 2008. Version 1.0
1 MagnaChip Semiconductor Ltd.
1 page Physical Dimensions
2 Leads, DPAK (TO252)
Dimensions are in millimeters unless otherwise specified
November 2008. Version 1.0
5 MagnaChip Semiconductor Ltd.
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MDD3752RH.PDF ] |
Número de pieza | Descripción | Fabricantes |
MDD3752RH | P-Channel Trench MOSFET | MagnaChip |
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