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PDF IRFZ46 Data sheet ( Hoja de datos )
| Número de pieza | IRFZ46 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | ART CHIP | |
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IRFZ46
HEXFET ® Power MOSFET
Dynamic dv/dt Rating
175 Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
VDSS=50V
RDS(on)=0.024Ω
ID=50 * A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately
50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID@ Tc=25
ID@ Tc=100
IDM
PD @ Tc=25
Parameter
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
50*
38
220
150
1.0
±20
100
4.5
-55 to -175
300 (1.6mm from case)
10 Ibf•in (1.1 N•m)
Units
A
W
W/
V
mJ
V/ns
Thermal Resistance
Parameter
RӨJC
RӨCS
RӨJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
-
-
-
Typ.
-
0.50
-
Max.
1.0
-
62
Units
/W
www.artschip.com
1
1 page  
IRFZ46
HEXFET ® Power MOSFET
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRFZ46.PDF ] | |
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