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PDF FDC855N Data sheet ( Hoja de datos )
| Número de pieza | FDC855N | |
| Descripción | Single N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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January 2008
FDC855N
Single N-Channel, Logic Level, PowerTrench® MOSFET
30V, 6.1A, 27mΩ
tm
Features
Max rDS(on) = 27mΩ at VGS = 10V, ID = 6.1A
Max rDS(on) = 36mΩ at VGS = 4.5V, ID = 5.3A
SuperSOTTM -6 package: small footprint (72% smaller than
standard SO-8; low profile (1mm thick).
RoHS Compliant
General Description
This N-Channel Logic Level MOSFET is an efficient solution for
low voltage and battery powered applications. Utilizing Fairchild
Semiconductor’s advanced PowerTrench® process, this device
possesses minimized on-state resistance to optimize the power
consumption. They are ideal for applications where in-line power
loss is critical.
Application
Power Management in Notebook, Hard Disk Drive
S
D
D
SuperSOTTM-6
Pin 1
G
D
D
D
D
G
D
D
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation (Steady State)
Power Dissipation (Steady State)
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
30
±20
6.1
20
1.6
0.8
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
30
78
°C/W
Device Marking
.855
Device
FDC855N
Package
SuperSOT-6
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDC855N Rev.C
1
www.fairchildsemi.com
1 page  
Dimensional Outline and Pad Layout
©2008 Fairchild Semiconductor Corporation
FDC855N Rev.C
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDC855N.PDF ] | |
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