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PDF AT25DN011 Data sheet ( Hoja de datos )

Número de pieza AT25DN011
Descripción 2.3V Minimum SPI Serial Flash Memory
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AT25DN011
1-Mbit, 2.3V Minimum
SPI Serial Flash Memory with Dual-Read Support
Features
PRELIMINARY DATASHEET
Single 2.3V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
Supports SPI Modes 0 and 3
Supports Dual Output Read
104MHz Maximum Operating Frequency
Clock-to-Output (tV) of 6ns
Flexible, Optimized Erase Architecture for Code + Data Storage Applications
Uniform 256-Byte Page erase
Uniform 4-Kbyte Block Erase
Uniform 32-Kbyte Block Erase
Full Chip Erase
Hardware Controlled Locking of Protected Sectors via WP Pin
128-Byte Programmable OTP Security Register
Flexible Programming
Byte/Page Program (1 to 256 Bytes)
Fast Program and Erase Times
1.5ms Typical Page Program (256 Bytes) Time
40ms Typical 4-Kbyte Block Erase Time
320ms Typical 32-Kbyte Block Erase Time
Automatic Checking and Reporting of Erase/Program Failures
Software Controlled Reset
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
350nA Ultra Deep Power Down current (Typical)
5µA Deep Power-Down Current (Typical)
25uA Standby current (Typical)
6mA Active Read Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Complies with Full Industrial Temperature Range
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
8-lead SOIC (150-mil)
8-pad Ultra Thin DFN (2 x 3 x 0.6mm)
8-lead TSSOP Package
DS-25DN011–038B–5/2014

1 page




AT25DN011 pdf
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AT25DN011
DS-25DN011–038B–5/2014
5

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AT25DN011 arduino
that is sent to the device that goes beyond the end of the page will wrap around back to the beginning of the same page.
For example, if the starting address denoted by A23-A0 is 0000FEh, and three bytes of data are sent to the device, then
the first two bytes of data will be programmed at addresses 0000FEh and 0000FFh while the last byte of data will be
programmed at address 000000h. The remaining bytes in the page (addresses 000001h through 0000FDh) will not be
programmed and will remain in the erased state (FFh). In addition, if more than 256 bytes of data are sent to the device,
then only the last 256 bytes sent will be latched into the internal buffer.
When the CS pin is deasserted, the device will take the data stored in the internal buffer and program it into the
appropriate memory array locations based on the starting address specified by A23-A0 and the number of data bytes
sent to the device. If less than 256 bytes of data were sent to the device, then the remaining bytes within the page will not
be programmed and will remain in the erased state (FFh). The programming of the data bytes is internally self-timed and
should take place in a time of tPP or tBP if only programming a single byte.
The three address bytes and at least one complete byte of data must be clocked into the device before the CS pin is
deasserted, and the CS pin must be deasserted on byte boundaries (multiples of eight bits); otherwise, the device will
abort the operation and no data will be programmed into the memory array. In addition, if the memory is in the protected
state (see “Block Protection” on page 15), then the Byte/Page Program command will not be executed, and the device
will return to the idle state once the CS pin has been deasserted. The WEL bit in the Status Register will be reset back to
the logical “0” state if the program cycle aborts due to an incomplete address being sent, an incomplete byte of data
being sent, the CS pin not being deasserted on byte boundaries, or because the memory location to be programmed is
protected.
While the device is programming, the Status Register can be read and will indicate that the device is busy. For faster
throughput, it is recommended that the Status Register be polled rather than waiting the tBP or tPP time to determine if the
data bytes have finished programming. At some point before the program cycle completes, the WEL bit in the Status
Register will be reset back to the logical “0” state.
The device also incorporates an intelligent programming algorithm that can detect when a byte location fails to program
properly. If a programming error arises, it will be indicated by the EPE bit in the Status Register.
Figure 8-1. Byte Program
CS
SCK
SI
SO
0 1 2 3 4 5 6 7 8 9 10 11 12
29 30 31 32 33 34 35 36 37 38 39
OPCODE
ADDRESS BITS A23-A0
DATA IN
0 0 0 0 0 0 1 0AAAAAA
MSB
MSB
AAADDDDDDDD
MSB
HIGH-IMPEDANCE
AT25DN011
DS-25DN011–038B–5/2014
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