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PDF K3511 Data sheet ( Hoja de datos )
| Número de pieza | K3511 | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3511
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3511 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
• Low Ciss: Ciss = 5900 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3511
TO-220AB
2SK3511-S
TO-262
2SK3511-ZJ
2SK3511-Z
TO-263
TO-220SMD Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
VDSS
VGSS
ID(DC)
ID(pulse)
PT
PT
75
±20
±83
±260
100
1.5
V
V
A
A
W
W
(TO-262)
Channel Temperature
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tch 150 °C
Tstg –55 to +150 °C
IAS 52 A
EAS 250 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 → 0 V
(TO-263, TO-220SMD)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.25
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15617EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
©
2001
1 page  
2SK3511
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
Pulsed
20
15
10
5
0
-100
VGS = 10 V
ID = 42 A
-50 0 50 100 150
Tch - Channel Temperature - °C
200
1000
SWITCHING CHARACTERISTICS
tf
100
tr
10
td(off)
td(on)
VDD = 38 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
10
ID - Drain Current - A
100
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
Ciss
1000
100
Crss
Coss
VGS = 0 V
f = 1 MHz
10
0.1
1
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
VDD = 60 V
38 V
80 15 V
10
8
60 6
VGS
40 4
20
0
0
VDS 2
ID = 83 A
0
20 40 60 80 100 120
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs. DRAIN CURRENT
100
10
VGS = 10 V
1 0V
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VSD - Source to Drain Voltage - V
VGS = 0 V
di/dt = 100 A/ µs
10
0.1 1
10
IF - Drain Current - A
100
Data Sheet D15617EJ1V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet K3511.PDF ] | |
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