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PDF K9GAG08X0D Data sheet ( Hoja de datos )

Número de pieza K9GAG08X0D
Descripción FLASH MEMORY
Fabricantes Samsung 
Logotipo Samsung Logotipo



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K9GAG08B0D
K9GAG08U0D
Advance
FLASH MEMORY
K9GAG08X0D
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
Samsung Confidential
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K9GAG08X0D pdf
K9GAG08B0D
K9GAG08U0D
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FLASH MEMORY
Figure 1. K9GAG08X0D Functional Block Diagram
VCC
VSS
A13 - A31
X-Buffers
Latches
& Decoders
16,384M + 872M Bit
NAND Flash
ARRAY
A0 - A12
Y-Buffers
Latches
& Decoders
(4,096 + 218)Byte x 524,288
Data Register & S/A
Y-Gating
Command
Command
Register
I/O Buffers & Latches
CE Control Logic
RE & High Voltage
WE Generator
Global Buffers
Output
Driver
CLE ALE WP
VCC
VSS
I/0 0
I/0 7
Figure 2. K9GAG08X0D Array Organization
512K Pages
(=4,096 Blocks)
4K Bytes
218 Bytes
1 Block = 128 Pages
(512K + 27.25K) Bytes
1 Page = (4K + 218)Bytes
1 Block = (4K + 218)B x 128 Pages
= (512K +27.25K) Bytes
1 Device = (4K + 218)B x 128 Pages x 4,096 Blocks
= 17,256 Mbits
8 bit
Page Register
4K Bytes
I/O 0 ~ I/O 7
218 Bytes
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
5th Cycle
I/O 0
A0
A8
A13
A21
A29
I/O 1
A1
A9
A14
A22
A30
I/O 2
A2
A10
A15
A23
A31
I/O 3
A3
A11
A16
A24
*L
I/O 4
A4
A12
A17
A25
*L
I/O 5
A5
*L
A18
A26
*L
I/O 6
A6
*L
A19
A27
*L
I/O 7
A7
*L
A20
A28
*L
Column Address
Row Address;
Page Address : A13 ~ A19
Plane Address : A20
Block Address : A21 ~ the last Address
NOTE : Column Address : Starting Address of the Register.
* L must be set to ’Low’.
* The device ignores any additional input of address cycles than required.
* Row Address consists of Page address (A13 ~ A19) & Plane address(A20) & Block address(A21 ~ the last Address)
Samsung Confidential
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K9GAG08X0D arduino
K9GAG08B0D
K9GAG08U0D
Advance
FLASH MEMORY
NAND Flash Technical Notes
Initial Invalid Block(s)
Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by Samsung.
The information regarding the initial invalid block(s) is called the initial invalid block information. Devices with initial invalid block(s)
have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An initial invalid block(s)
does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select tran-
sistor. The system design must be able to mask out the initial invalid block(s) via address mapping. The 1st block, which is placed on
00h block address, is guaranteed to be a valid block at the time of shipment.
Identifying Initial Invalid Block(s)
All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The
initial invalid block(s) status is defined by the 1st byte in the spare area. Samsung makes sure that the last page of every initial invalid
block has non-FFh data at the column address of 4,096.The initial invalid block information is also erasable in most cases, and it is
impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the initial invalid
block(s) based on the initial invalid block information and create the initial invalid block table via the following suggested flow
chart(Figure 3). Any intentional erasure of the initial invalid block information is prohibited.
Start
Set Block Address = 0
Increment Block Address
* Check "FFh" at the column address
4,096 of the last page in the block
Create (or update)
Initial
No
Check "FFh" ?
Invalid Block(s) Table
Yes
No Last Block ?
Yes
End
Figure 3. Flow chart to create initial invalid block table.
Samsung Confidential
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