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PDF uClamp3311T Data sheet ( Hoja de datos )
| Número de pieza | uClamp3311T | |
| Descripción | 1-Line ESD protection | |
| Fabricantes | Semtech Corporation | |
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PROTECTION PRODUCTS -MicroClamp®
Description
The μClamp® series of Transient Voltage Suppressors
(TVS) are designed to replace multilayer varistors
(MLVs) in portable applications such as cell phones,
notebook computers, and PDAs. They offer superior
electrical characteristics such as lower clamping
voltage and no device degradation when compared to
MLVs. They are designed to protect sensitive semicon-
ductor components from damage or upset due to
electrostatic discharge (ESD), lightning, electrical fast
transients (EFT), and cable discharge events (CDE).
The μClamp®3311T is constructed using Semtech’s
proprietary EPD process technology. The EPD process
provides low standoff voltages with significant reduc-
tions in leakage currents and capacitance over silicon-
avalanche diode processes. They feature a true
operating voltage of 3.3 volts for superior protection
when compared to traditional pn junction devices.
The μClamp3311T is in a 2-pin SLP1006P2T package.
It measures 1.0 x 0.6 x 0.4mm. The leads are spaced
at a pitch of 0.65mm and are finished with lead-free
NiPdAu. Each device will protect one line operating at
3.3 volts. It gives the designer the flexibility to protect
single lines in applications where arrays are not practi-
cal. They may be used to meet the ESD immunity
requirements of IEC 61000-4-2. The combination of
small size and high ESD surge capability makes them
ideal for use in portable applications such as cellular
phones, digital cameras, and MP3 players.
uClamp3311T
Low Profile μClamp®
1-Line ESD protection
PRELIMINARY
Features
Transient protection for data lines to
IEC 61000-4-2 (ESD) ±30kV (air), ±30kV (contact)
IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
Cable Discharge Event (CDE)
Ultra-small package (1.0 x 0.6 x 0.4mm)
Protects one data line
Low reverse current: 10nA typical (VR=3.3V)
Working voltage: 3.3V
Low leakage current
Solid-state silicon-avalanche technology
Mechanical Characteristics
SLP1006P2T package
Pb-Free, Halogen Free, RoHS/WEEE Compliant
Nominal Dimensions: 1.0 x 0.6 x 0.4 mm
Lead Finish: NiPdAu
Molding compound flammability rating: UL 94V-0
Marking : Marking code
Packaging : Tape and Reel
Applications
Cellular Handsets & Accessories
Portable Instrumentation
Keypads, Side Keys, LCD Displays
Notebooks & Desktop Computers
MP3 Players
Dimensions
1.0
0.60
0.65
Schematic & Pin Configuration
2
0.40
Nominal Dimensions (mm)
Revision 8/8/2012
1
SLP1006P2T (Bottom View)
1 www.semtech.com
1 page  
uClamp3311T
PROTECTION PRODUCTS
Applications Information
Semtech Low Voltage TVS
Conventional TVS diodes are silicon avalanche, p-n
junction devices designed to operate at voltages as
low as 5 volts. However, many of today's
semiconductor devices operate at voltages below 5
volts, and thus require lower voltage protection
devices. Unfortunately, for operating voltages below 5
volts, conventional TVS diode technology becomes
impractical. This is due to the adverse effects of high
leakage current and high capacitance caused by the
high impurity concentrations that are needed to lower
the device voltage below 5 volts. Semtech's
proprietary low voltage EPD device technology was
developed to provide protection for today's circuits
operating at voltages below 5 volts. Unlike
conventional TVS diodes, the EPD device utilizes a
complex four layer (n-p-p-n) structure. The
construction of these devices results in very low
operating voltage without the adverse effects
mentioned above.
PRELIMINARY
Device Operation
Since the EPD TVS devices use a 4-layer structure,
they exhibit a slightly different IV characteristic curve
when compared to conventional devices. Figure 1
compares the IV characteristic curves of a low voltage
TVS with a working voltage
conventional device with a
w(VoRrWkMi)ngofv3ol.t3agveoltosf
to
5
a
volts.
During normal operation, each device represents a
high-impedance to the circuit up to its working voltage.
During an ESD event, they will begin to conduct and
will enter a low impedance state. For the 3.3 volt
device, this happens when the punch-through voltage
(VPT) is exceeded. Unlike a conventional 5 volt device,
the low voltage TVS will exhibit a slight negative
resistance characteristic as it conducts current. This
characteristic aids in lowering the clamping voltage of
the device. However, the device can latch up if a DC
bias voltage is present. The reason being that in order
for the device to turn off, the voltage must fall below
the snap-back voltage (VSB). This value is normally a
minimum of 2.8 volts. If the device is biased above
the 2.8 volts, it will never fall below the snap-back
voltage and will therefore stay in a conducting state.
Low Voltage TVS
¾ Working Voltage (VRWM): Maximum rated
operating voltage at which the device will
appear as a high impedance to the
protected circuit.
¾ Punch-Through Voltage (VPT): Minimum
rated voltage at which the device will
become a low impedance (i.e. Minimum
Turn-On Voltage). When VPT is exceeded,
the device will conduct.
¾ Snap-Back Voltage (VSB): Minimum rated
voltage when the device is in a conducting
state measured at ISB = 50mA. This
voltage is less than the working voltage.
The voltage must fall below VSB for the
device to turn off.
¾ Clamping Voltage (VC): Maximum voltage
drop across the device at a defined peak
pulse current (IPP). This is the voltage
seen by the protected circuit during a
transient event.
0.05
0.04
0.03
Semtech 3.3 Volt TVS
0.02
0.01
0
012
-0.01
-0.02
-0.03
VSB
3
VRWM
VPT
456
VRWM
Voltage - V (V)
Figure 1 - 3.3 volt vs. 5 volt TVS IV Curve
© 2012 Semtech Corporation
5
Semtech
5 Volt TVS
78
VBR
9 10
www.semtech.com
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| PDF Descargar | [ Datasheet uClamp3311T.PDF ] | |
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