|
|
Número de pieza | FLM1415-8F | |
Descripción | Ku-Band Internally Matched FET | |
Fabricantes | SUMITOMO | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FLM1415-8F (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! FLM1415-8F
Ku-Band Internally Matched FET
FEATURES
•High Output Power: P1dB=39.0dBm(Typ.)
•High Gain: G1dB=5.0dB(Typ.)
•High PAE: ηadd=25%(Typ.)
•Broad Band: 14.5 to 15.3GHz
•Impedance Matched Zin/Zout = 50ohm
•Hermetically Sealed Package
DESCRIPTION
The FLM1415-8F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50ohm system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C)
Ite m
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Pow er Dissipation
Storage Tem perature
Channel Tem perature
VDS
V GS
PT
Tstg
Tch
15
-5
42.8
-65 to +175
175
Unit
V
V
W
deg.C
deg.C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.C)
Ite m
Sym bol
Condition
Lim it
DC Input Voltage
Forw ard Gate Current
Reverse Gate Current
Channel Tem perature
VDS
IGF RG=100 ohm
IGR RG=100 ohm
Tch
≤10
≤32.0
≥-4.4
150
Unit
V
mA
mA
deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Ite m
Sym bol
Condition
Drain Current
Trans conductance
Pinch-off Voltage
Gate-Source Breakdow n Voltage
Output Pow er at 1dB G.C.P.
Pow er Gain at 1dB G.C.P.
Drain Current
Pow er-added Efficiency
Gain Flatness
Therm al Resistance
Channel Tem perature Rise
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
Nadd
∆G
Rth
∆Tch
VDS=5V , VGS=0V
VDS=5V , IDS=2200mA
VDS=5V , IDS=170mA
IGS=-170uA
VDS=10V
IDSDC=0.65 IDSS (typ.)
f= 14.5 to 15.3 GHz
Zs=ZL=50 ohm
Channel to Case
10V x Idsr X Rth
CASE STYLE : IA
ESD Class 3A 4000V to 8000V
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kohm)
M in.
-
-
-0.5
-5.0
38.0
4.0
-
-
-
-
-
Lim it
Typ. Max.
Unit
3400
3400
-1.5
-
39.0
5.0
2200
25
-
3.0
-
5200
-
-3.0
-
-
-
2600
-
1.2
3.5
80
mA
mS
V
V
dBm
dB
A
%
dB
deg.C/W
deg.C
G.C.P.: Gain Compression Point
RoHS COMPLIANCE
Ye s
Edition 1.3
Jul. 2012
1
1 page FLM1415-8F
Ku-Band Internally Matched FET
For further information please contact:
http://global-sei.com/Electro-optic/about/office.html
CAUTION
This product contains gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For
safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as
these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
・Observe government laws and company regulations when discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste procedures.
Edition 1.3
Jul. 2012
5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet FLM1415-8F.PDF ] |
Número de pieza | Descripción | Fabricantes |
FLM1415-8F | Ku-Band Internally Matched FET | SUMITOMO |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |