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PDF FLM1415-6F Data sheet ( Hoja de datos )

Número de pieza FLM1415-6F
Descripción Internally Matched FET
Fabricantes Eudyna 
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FLM1415-6F
FEATURES
• High Output Power: P1dB = 37.0dBm (Typ.)
• High Gain: G1dB = 5.5dB (Typ.)
• High PAE: ηadd = 20% (Typ.)
• Low IM3 = -45dBc@Po = 26.0dBm (Typ.)
• Broad Band: 14.5 ~ 15.3GHz
• Impedance Matched Zin/Zout = 50
• Hermetically Sealed
Internally Matched Power GaAs FET
DESCRIPTION
The FLM1415-6F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
15 V
-5 V
Total Power Dissipation
PT Tc = 25°C
31.2 W
Storage Temperature
Channel Temperature
Tstg
Tch
-65 to +175
175
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.0 and -2.8 mA respectively with
gate resistance of 100.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 2800 4200
mA
Transconductance
gm VDS = 5V, IDS = 1800mA - 2350 -
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 120mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO IGS = -120µA
-5.0 -
-
V
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-Added Efficiency
P1dB
G1dB
Idsr
ηadd
VDS = 10V,
IDS = 0.6 IDSS(Typ.),
f = 14.5 ~ 15.3 GHz,
ZS = ZL = 50
36.0 37.0 -
4.5 5.5 -
- 1800 2100
- 20 -
dBm
dB
mA
%
Gain Flatness
G
- - ±0.6
dB
3rd Order Intermodulation
Distortion
Thermal Resistance
f = 15.3GHz, f = 10MHz
IM3 2-Tone Test
-42 -45
Pout = 26.0dBm S.C.L.
-
Rth Channel to Case
- 4.0 4.5
dBc
°C/W
Channel Temperature Rise
CASE STYLE: IA
Tch 10V x Idsr x Rth
- - 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.5
August 2004
1

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