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PDF FLM1314-18F Data sheet ( Hoja de datos )
| Número de pieza | FLM1314-18F | |
| Descripción | Ku-Band Internally Matched FET | |
| Fabricantes | Eudyna | |
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FLM1314-18F
FEATURES
•High Output Power: P1dB=42.5dBm(Typ.)
•High Gain: G1dB=6.0dB(Typ.)
•High PAE: ηadd=27%(Typ.)
•Broad Band: 13.75 to 14.5GHz
•Impedance Matched Zin/Zout = 50ohm
•Hermetically Sealed Package
Ku-Band Internally Matched FET
DESCRIPTION
The FLM1314-18F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50ohm system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C)
Ite m
Symbol
Rating
Drain-Source Voltage
VDS
15
Gate-Source Voltage
V GS
-5
Total Pow er Dissipation
PT
75
Storage Tem perature
Tstg
-65 to +150
Channel Tem perature
Tch
175
Unit
V
V
W
deg.C
deg.C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.C)
Ite m
Sym bol
Condition
Lim it
DC Input Voltage
Forw ard Gate Current
Reverse Gate Current
VDS
IGF RG=25 ohm
IGR RG=25 ohm
≤10
≤44.6
≥-9.6
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Ite m
Sym bol
Condition
Lim it
Min. Typ. Max.
Unit
Drain Current
Trans conductance
Pinch-off Voltage
Gate-Source Breakdow n Voltage
Output Pow er at 1dB G.C.P.
Pow er Gain at 1dB G.C.P.
Drain Current
Pow er-added Efficiency
Gain Flatness
3rd Order Interm odulation
Dis tor tion
IDSS
gm
Vp
V GSO
P1dB
G1dB
Idsr
Nadd
∆G
IM3
VDS=5V , VGS=0V
VDS=5V , IDS=4.65A
VDS=5V , IDS=390mA
IGS=-390uA
VDS=10V
IDSDC=4.0A
f= 13.75 to 14.5 GHz
Zs=ZL=50 ohm
f=14.5 GHz
∆f=10MHz，2-tone Test
Pout=36.0dBm (S.C.L.)
-
-
-0.5
-5.0
42.0
5.0
-
-
-
-25
9.3
6600
-1.5
-
42.5
6.0
5.0
27
-
14
-
-3.0
-
-
-
6.0
-
1.2
-30 -
A
mS
V
V
dBm
dB
A
%
dB
dBc
Therm al Resistance
Channel Tem perature Rise
Rth
∆Tch
Channel to Case
10V x Idsr X Rth
- 1.8 2.0 deg.C/W
-
- 100
deg.C
CASE STYLE : IB
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Lev el
ESD Class 3A 4000V to 8000V
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kohm)
RoHS COMPLIANCE
Yes
Edition 1.2
Jul. 2012
1
1 page  
FLM1314-18F
Ku-Band Internally Matched FET
For further information please contact:
http://global-sei.com/Electro-optic/about/office.html
CAUTION
This product contains gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For
safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as
these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
・Observe government laws and company regulations when discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste procedures.
Edition 1.2
Jul. 2012
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet FLM1314-18F.PDF ] | |
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