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PDF FLM1011-20F Data sheet ( Hoja de datos )
| Número de pieza | FLM1011-20F | |
| Descripción | X / Ku-Band Internally Matched FET | |
| Fabricantes | SUMITOMO | |
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FLM1011-20F
FEATURES
・High Output Power: P1dB=43.0dBm(Typ.)
・High Gain: G1dB=7.0dB(Typ.)
・High PAE: ηadd=27%(Typ.)
・Broad Band: 10.7～11.7GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
X,Ku-Band Internally Matched FET
DESCRIPTION
The FLM1011-20F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Rating
15
-5
Unit
V
V
Total Power Dissipation
PT
93.7 W
Storage Temperature
Tstg
-65 to +175
oC
Channel Temperature
Tch
175 oC
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25°C)
Item
Symbol
Condition
Limit
DC Input Voltage
VDS
≤10
Forward Gate Current
IGF RG=25Ω
≤64
Reverse Gate Current
IGR RG=25Ω
≥-11.2
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Item
Drain Current
Symbol
IDSS
Test Conditions
VDS=5V, VGS=0V
Min.
-
Limit
Typ.
10.8
Max.
16.2
Unit
A
Transconductance
gm
VDS=5V, IDS=6480mA
-
10
-
S
Pinch-off Voltage
Vp
VDS=5V, IDS=600mA
-0.5 -1.5
-3.0
V
Gate-Source Breakdown Voltage
VGSO
IGS=-600µA
-5.0 - - V
Output Power at 1dB G.C.P.
P1dB
42 43
- dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
G1dB
Idsr
ηadd
VDS=10V
f=10.7 - 11.7 GHz
IDS=0.60IDSS(typ)
Zs=ZL=50Ω
6.0 7.0
-
- 6.0 7.2
- 27
-
dB
A
%
Gain Flatness
∆G
-
- 1.2
dB
3rd Order Intermodulation
Distortion
Thermal Resistance
f= 11.7 GHz
IM3
Δf=10MHz, 2-tone Test -42.0 -45.0
-
dBc
Pout=31.0dBm (S.C.L.)
Rth Channel to Case
- 1.4 1.6 oC /W
Channel Temperature Rise
CASE STYLE: IK
∆Tch
10V x Idsr X Rth
- - 100 oC
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
ESD
Class III
2000V ~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kW)
Edition 1.2
September 2004
1
1 page  
FLM1011-20F
X-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
5
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| PDF Descargar | [ Datasheet FLM1011-20F.PDF ] | |
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