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PDF FLM1011-3F Data sheet ( Hoja de datos )
| Número de pieza | FLM1011-3F | |
| Descripción | X / Ku-Band Internally Matched FET | |
| Fabricantes | SUMITOMO | |
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FLM1011-3F
X, Ku-Band Internally Matched FET
FEATURES
• High Output Power: P1dB = 35.0dBm (Typ.)
• High Gain: G1dB = 7.5dB (Typ.)
• High PAE: ηadd = 29% (Typ.)
• Low IM3 = -46dBc@Po = 24.0dBm
• Broad Band: 10.7 ~ 11.7GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
DESCRIPTION
The FLM1011-3F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15 V
Gate-Source Voltage
VGS
-5 V
Total Power Dissipation
PT Tc = 25°C
25.0 W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175 °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 13.0 and -1.4 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 1400 2100
mA
Transconductance
gm VDS = 5V, IDS = 900mA - 1300 -
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 70mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO IGS = -70µA
-5.0 -
-
V
Output Power at 1dB G.C.P.
P1dB
34.0 35.0 -
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-Added Efficiency
G1dB
Idsr
ηadd
VDS = 10V,
IDS = 0.6 IDSS(Typ.),
f = 10.7 ~ 11.7 GHz,
ZS = ZL = 50Ω
6.5 7.5 -
- 900 1100
- 29 -
dB
mA
%
Gain Flatness
∆G
- - ±0.6
dB
3rd Order Intermodulation
Distortion
Thermal Resistance
f = 11.7GHz, ∆f = 10MHz
IM3 2-Tone Test
-44 -46
Pout = 24.0dBm S.C.L.
-
Rth Channel to Case
- 5.0 6.0
dBc
°C/W
Channel Temperature Rise
CASE STYLE: IA
∆Tch 10V x Idsr x Rth
- - 66
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.4
August 2004
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FLM1011-3F.PDF ] | |
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