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PDF FLM0910-15F Data sheet ( Hoja de datos )
| Número de pieza | FLM0910-15F | |
| Descripción | X-Band Internally Matched FET | |
| Fabricantes | SUMITOMO | |
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FLM0910-15F
FEATURES
High Output Power: P1dB=42.0dBm(Typ.)
High Gain: G1dB=7.5dB(Typ.)
High PAE: ηadd=32%(Typ.)
Broad Band: 9.5~10.5GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed Package
X-Band Internally Matched FET
DESCRIPTION
The FLM0910-15F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC)
Ite m
Symbol
Rating
Drain-Source Voltage
VDS
15
Gate-Source Voltage
V GS
-5
Total Pow e r Dissipation
PT
57.7
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Unit
V
V
W
oC
oC
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC)
Ite m
DC Input Voltage
Forw ard Gate Current
Reverse Gate Current
Symbol
VDS
IGF
IGR
Condition
RG=50 ohm
RG=50 ohm
Lim it
10
16.7
-3.62
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Ite m
Drain Current
Trans conductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Pow e r at 1dB G.C.P.
Pow e r Gain at 1dB G.C.P.
Drain Current
Pow e r -added Efficiency
Gain Flatne s s
Therm al Re s istance
Channe l Te m perature Rise
Symbol
Condition
IDSS
gm
Vp
V GSO
P1dB
G1dB
Idsr
Nadd
∆G
Rth
∆ Tch
V DS=5V , V GS=0V
V DS=5V , IDS=3.5A
V DS=5V , IDS=300mA
IGS=-300uA
V DS=10V
IDS=0.5IDSS (typ.)
f= 9.5 ~ 10.5 GHz
Zs=ZL=50 ohm
Channel to Case
10V x Idsr X Rth
M in.
-
-
-0.5
-5.0
41.0
6.5
-
-
-
-
-
Lim it
Typ.
7.2
4500
-1.5
-
42.0
7.5
4.0
32
-
2.3
-
M ax.
10.8
-
-3.0
-
-
-
5.0
-
1.2
2.6
100
Unit
A
mS
V
V
dBm
dB
A
%
dB
oC/W
oC
CASE STYLE : IB
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Lev el
ESD Clas s III 2000V ~
Edition 1.1
May 2005
1
1 page  
FLM0910-15F
X-Band Internally Matched FET
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
CAUTION
Eudyna Devices Compound Semiconductor Products contain gallium
arsenide (GaAs) which can be hazardous to the human body and the
environment.
For safety, observe the following procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding
this product. This product must be discarded in accordance with
methods specified by applicable hazardous waste procedures.
Eudyna Devices Asia Pte. Ltd. Hong Kong Branch
Rm.1906B, 19/F, Tower 6, China Hong Kong City,
33 Canton Road,
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel: 852 2377-0227
Fax: 852 2377-3921
Eudyna Devices International s.r.l
Via Teglio 8/2-20158 Milano Italy
TEL:+39-02-8738-1695
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
Tel +81-55-275-4411
Fax +81-55-275-9461
Sales Division
1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan
Tel +81-45-853-8156
Fax +81-45-853-8170
5
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