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Número de pieza | FLM8596-12F | |
Descripción | X / Ku-Band Internally Matched FET | |
Fabricantes | SUMITOMO | |
Logotipo | ||
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No Preview Available ! FLM8596-12F
FEATURES
X, Ku-Band Internally Matched FET
• High Output Power: P1dB = 40.5dBm (Typ.)
• High Gain: G1dB = 7.5dB (Typ.)
• High PAE: ηadd = 25% (Typ.)
• Low IM3 = -45dBc@Po = 29.5dBm
• Broad Band: 8.5 ~ 9.6GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
DESCRIPTION
The FLM8596-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15 V
Gate-Source Voltage
VGS
-5 V
Total Power Dissipation
PT Tc = 25°C
57.6 W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175 °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with
gate resistance of 50Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 6000 9000
mA
Transconductance
gm VDS = 5V, IDS = 3600mA - 5000 -
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 300mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO IGS = -340µA
Output Power at 1dB G.C.P.
P1dB
-5 -
39.5 40.5
-
-
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
G1dB
Idsr
ηadd
∆G
VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 8.5 ~ 9.6 GHz,
ZS=ZL= 50 ohm
6.5 7.5 -
- 3600 4500
- 25 -
- - ±0.6
dB
mA
%
dB
3rd Order Intermodulation
Distortion
f = 9.6 GHz, ∆f = 10 MHz
IM3 2-Tone Test
Pout = 29.5dBm S.C.L.
-42 -45 -
dBc
Thermal Resistance
Rth Channel to Case
- 2.3 2.6
°C/W
Channel Temperature Rise
CASE STYLE: IB
∆Tch
10V x Idsr x Rth
- - 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.1
August 2004
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet FLM8596-12F.PDF ] |
Número de pieza | Descripción | Fabricantes |
FLM8596-12F | Ku-Band Internally Matched FET | ETC |
FLM8596-12F | X / Ku-Band Internally Matched FET | SUMITOMO |
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