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PDF FLM7785-45F Data sheet ( Hoja de datos )

Número de pieza FLM7785-45F
Descripción C-Band Internally Matched FET
Fabricantes SUMITOMO 
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FLM7785-45F
FEATURES
High Output Power: P1dB=46.5dBm(Typ.)
High Gain: G1dB=7.0dB(Typ.)
High PAE: ηadd=32.5%(Typ.)
Broad Band: 7.7~8.5GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM7785-45F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25OC)
Item
Symbol
Rating
Drain-Source Voltage
VDS
15
Gate-Source Voltage
VGS
-5
Total Power Dissipation
Storage Temperature
PT
Tstg
115
-65 to +175
Channel Temperature
Tch
175
Unit
V
V
W
OC
OC
RECOMMENDED OPERATING COMDITION (Case Temperature Tc=25OC)
Item
Symbol
Condition
Limit
DC Input Voltage
VDS
10
Forward Gate Current
IGF RG=10
52
Reverse Gate Current
IGR RG=10
-23.2
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25OC)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
ηadd
G
Test Conditions
VDS=5V, VGS=0V
VDS=5V, IDS=8.0A
VDS=5V, IDS=960mA
IGS=-960uA
VDS=10V
f=7.7 - 8.5 GHz
IDS(DC)=8.0A(typ.)
Zs=ZL=50
Min.
-
-
-0.5
-5.0
46.0
6.0
-
-
-
Limit
Typ.
24
16
-1.5
-
46.5
7.0
11 
32.5
-
Max.
-
-
-3.0
-
-
-
13
-
1.6
Unit
A
S
V
V
dBm
dB
A
%
dB
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IK
Rth
Tch
Channel to Case
10V x Ids(DC) x Rth
- 1.1 1.3 OC/W
- - 100 OC
G.C.P.:Gain Compression Point
ESD
Class III
2000V ~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k)
Edition 1.3
September 2004
1

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FLM7785-45F pdf
FLM7785-45F
C-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
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